Component built-in module and method for producing the same

ABSTRACT

A component built-in module including a core layer formed of an electric insulating material, and an electric insulating layer and a plurality of wiring patterns, which are formed on at least one surface of the core layer. The electric insulating material of the core layer is formed of a mixture including at least an inorganic filler and a thermosetting resin. At least one or more of active components and/or passive components are contained in an internal portion of the core layer. The core layer has a plurality of wiring patterns and a plurality of inner vias formed of a conductive resin. The electric insulating material formed of the mixture including at least an inorganic filler and a thermosetting resin of the core layer has a modulus of elasticity at room temperature in the range from 0.6 GPa to 10 GPa. Thus, it is possible to provide a thermal conductive component built-in module capable of filling the inorganic filler with high density; burying the active component such as a semiconductor etc. and the passive component such as a chip resistor, a chip capacitor, etc. in the internal portion of the substrate; and simply producing a multilayer wiring structure.

BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a high-density mounted modulecontaining an active component such as a semiconductor etc. and apassive component such as a resistor, a capacitor, etc.

[0003] 2. Description of the Prior Art

[0004] Recently, with a demand for high performance and miniaturizationof electronic equipment, high density and high performance of asemiconductor have been increasingly desired. This leads to a demand fora small size and high-density circuit substrate on which such asemiconductor is to be mounted. In order to meet such demands, aconnection method using an inner via that can connect between wiringpatterns of LSIs or components in the shortest distance has beendeveloped in various fields in order to achieve higher density mounting.

[0005] However, there is a limitation in mounting componentstwo-dimensionally with high density even with the above-mentionedmethods. Furthermore, since these high-density mounted substrates havingan inner-via structure are formed of a resin-based material, the thermalconductivity is low. Therefore, as the mounting density of componentsbecomes higher, it is getting more difficult to release heat that hasbeen generated by the components. In the near future, a dock frequencyof a CPU is expected to be about 1 GHz. It is estimated that with thesophistication in the function of the CPU, its electric powerconsumption accordingly will reach 100 W to 150 W per chip. Furthermore,in accordance with high speed and high density, the effect of noisecannot be ignored. Therefore, there is an expectation for a module inwhich components are contained three-dimensionally, in addition to acircuit substrate with a high-density and high-performance, as well asan anti-noise property and a thermal radiation property.

[0006] In order to meet such demands, JP 2(1990)-121392A proposes amodule in which a multilayer ceramic substrate is used as a substrateand a capacitor and a register are formed in an internal portion of thesubstrate. Such a ceramic multilayer substrate is obtained by processinga material that has a high dielectric property and can be firedsimultaneously with a substrate material into a sheet and then firingthe sheet sandwiched between the substrates. However, in the case wheredifferent kinds of materials are fired simultaneously, due to a lag insintering timing or difference in the shrinkage at the time ofsintering, the multilayer substrate may suffer some warping after beingfired or an internal wiring may be peeled off. Therefore, it isnecessary to control firing conditions precisely. Furthermore, thecomponents involved in a ceramic substrate are based on simultaneousfiring as mentioned above. Therefore, it is possible to include acapacitor, a resistor, or the like, but it is impossible to fire asemiconductor of silicon etc., which lacks in thermal resistantproperty, simultaneously, and thus the semiconductor cannot becontained.

[0007] On the other hand, a circuit substrate in which an activecomponent such as a semiconductor etc. and a passive component such as acapacitor, a resistor etc. are contained at low temperatures isproposed. JP 3 (1991)-69191 A and JP11 (1999)-103147 A describe a methodincluding the steps of: mounting electric components onto a copperwiring formed on a printed wiring board material; further coating theentire surface of the printed wiring board with resin so as to form aburied layer; and then adhering a plurality of layers by an adhesive.Furthermore, JP 9 (1997)-214092 A describes a method including the stepsof burying a material such as a dielectric material etc. in a throughhole; forming a surface electrode and allowing a capacitor or a resistorto be included. In addition, there also is a method of adding a functionof a capacitor etc. into a printed wiring board itself. JP 5 (1995)-7063A (U.S. Pat. No. 3,019,541) describes a capacitor built-in substrate inwhich electrodes are formed on both surfaces of the dielectric substrateobtained by mixing dielectric powder and resin. Furthermore, JP1l(1999)-220262 A describes a method for allowing a semiconductor, acapacitor, or the like to be contained in an inner-via structure.

[0008] As mentioned above, a conventional three-dimensionally mountedmodule having an inner via structure capable of realizing a high-densitywiring and containing components is classified into two types: a moduleusing a ceramic substrate that is excellent in the thermal radiationproperty and the air tightness; and a module that can be cured at a lowtemperature. The ceramic substrate is excellent in the thermal radiationproperty and capable of containing a capacitor with high dielectricconstant, but it is difficult to fire different kinds of materialssimultaneously and it is impossible to include a semiconductor. Also,there is a problem from a viewpoint of cost. On the other hand, aprinted wiring board that can be cured at low temperatures has apossibility of including a semiconductor and is advantageous from theviewpoint of cost, but it is difficult to obtain a high dielectricconstant in the case of a composite material mixing a dielectricmaterial, etc. and resin. This is apparent from an example of thecapacitor formed in the through hole or a printed wiring board mixingdielectric powder. In general, the printed wiring board has a lowthermal conductivity and inadequate in heat resistance property.Furthermore, the method of sealing a semiconductor or a capacitor, etc.mounted on the printed wiring board with resin to allow a plurality oflayers to be contained has a problem in which individual components canbe contained but the thickness of the module itself for the individualcomponents to be buried becomes large, and thus it is difficult toreduce the module volume. Furthermore, due to the thermal stress due tothe difference of the coefficient of thermal expansion between thecontained components and the printed wiring board, steps for providing abuffer layer having a constant coefficient of thermal expansion betweenthe component and the printed wiring board material, adjusting thecoefficient of thermal expansion of the printed circuit materials, orthe like, are taken. However, the coefficient of thermal expansion ofthe semiconductor is generally small, and it is extremely difficult toadjust the coefficient of thermal expansion only with a printed wiringboard material in the range of operation temperatures.

SUMMARY OF THE INVENTION

[0009] With the foregoing in mind, it is an object of the presentinvention to provide a thermal conductive component built-in module inwhich an inorganic filler can be contained in a thermosetting resin athigh density, an active component such as a semiconductor etc. and apassive component such as a chip resistor, a chip capacitor, etc. areburied in the internal portion thereof by a simple method, and amultilayer wiring structure can be formed simply. In the presentinvention, by selecting an inorganic filler and a thermosetting resin,it is possible to produce a module having a desired performance and toprovide a component built-in module that is excellent in a thermalradiation property and a dielectric property.

[0010] In order to solve the above-mentioned problems, the componentbuilt-in module of the present invention includes a core layer formed ofan electric insulating material; an electric insulating layer and aplurality of wiring patterns formed on at least one surface of the corelayer. In the component built-in module, the electric insulatingmaterial of the core layer is formed of a mixture including at least aninorganic filler and a thermosetting resin; at least one or more ofactive components and/or passive components are contained in an internalportion of the core layer; the core layer has a plurality of wiringpatterns and a plurality of inner vias formed of a conductive resin; andthe electric insulating material formed of the mixture including atleast an inorganic filler and a thermosetting resin of the core layerhas a modulus of elasticity at room temperature in the range from 0.6GPa to 10 GPa.

[0011] According to such a configuration, it is possible to provide amodule allowing an active component such as a semiconductor etc. and apassive component such as a chip resistor, a chip capacitor, etc. to beburied with a simple technique, having a desired performance and a highreliability with respect to stress such as a thermal shock, by selectinga suitable inorganic filler and thermosetting resin. Namely, it ispossible to adjust the coefficient of thermal expansion of the module inthe in-plane direction to that of a semiconductor, or to provide themodule with a thermal radiation property. In addition, by setting themodulus of elasticity of the electric insulating material at roomtemperature to be in the range from 0.6 GPa to 10 GPa, a component suchas a semiconductor can be contained without stress. Therefore, it ispossible to provide a module having a high-density mounting structure.Furthermore, since it is possible to form a multilayer high densitywiring layer capable of re-wiring on the surface of the core layer inwhich a component is contained, an ultra-thin and high-density modulecan be realized. Furthermore, the problem of noise that may be caused inaccordance with a future development of high frequency can be expectedto be reduced by arranging the semiconductor and the chip capacitorextremely close to each other.

[0012] Furthermore, the component built-in module of the presentinvention has a configuration in which the electric insulating materialformed of the mixture including at least an inorganic filler and athermosetting resin of the core layer has a modulus of elasticity atroom temperature in the range from 0.6 GPa to 10 GPa, and thethermosetting resin includes a plurality of thermosetting resins havingdifferent glass transition temperatures. According to such aconfiguration, it is possible to obtain a component built-in module thatis strong with respect to a thermal stress by a thermal shock of thecontained components, even if components with various coefficient ofthermal expansion are present.

[0013] Furthermore, the component built-in module of the presentinvention has a configuration in which the electric insulating materialformed of the mixture including at least an inorganic filler and athermosetting resin of the core layer has a modulus of elasticity atroom temperature in the range from 0.6 GPa to 10 GPa, and thethermosetting resin includes at least a thermosetting resin having aglass transition temperature in the range from −20° C. to 60° C. and athermosetting resin having a glass transition temperature in the rangefrom 70° C. to 170° C. According to such a configuration, it is possibleto obtain a component built-in module that is further strengthened withrespect to a thermal stress by a thermal shock of the containedcomponents, even if components with various coefficient of thermalexpansion are present.

[0014] Furthermore, it is preferable that the component built-in moduleof the present invention includes a through hole that extends throughall of the core layer, the electric insulating layer and the wiringpattern.

[0015] Thus, in addition to the above-mentioned effects, since it ispossible to use a usual process and equipment for producing a printedwiring board, a component built-in module can be realized extremelysimply.

[0016] Furthermore, it is preferable that the component built-in moduleof the present invention includes a core layer formed of an electricinsulating material; an electric insulating layer including an electricinsulating material formed of a mixture including an inorganic fillerand a thermosetting resin, which is formed on at least one surface ofthe core layer; and a plurality of wiring patterns formed of a copperfoil; wherein the core layer has a plurality of wiring patterns formedof a copper foil and a plurality of inner vias formed of a conductiveresin, and the wiring patterns are connected electrically to each otherby the inner vias.

[0017] According to such a configuration, it is possible to provide amodule that allows an active component such as a semiconductor etc. anda passive component such as a chip resistor, a chip capacitor, etc. tobe buried with a simple technique, having a desired performance and ahigh reliability with respect to stress such as a thermal shock, byselecting a suitable inorganic filler and thermosetting resin. In otherwords, it is possible to adjust the coefficient of thermal expansion ofthe module in the in-plane direction to that of a semiconductor, or toprovide the module with a thermal radiation property. Furthermore, sinceit is possible to form a multilayer high-density wiring layer capable ofre-wiring on the surface of the core layer in which a component iscontained in an inner via structure, it is possible to realize anultra-thin and high-density module.

[0018] Furthermore, it is preferable that the component built-in moduleof the present invention includes a core layer formed of an electricinsulating material; an electric insulating layer including aninsulating material formed of a thermosetting resin, which is formed onat least one surface of the core layer; and a plurality of wiringpatterns formed by copper-plating; wherein the core layer has aplurality of wiring patterns formed of a copper foil and a plurality ofinner vias formed of a conductive resin, and the wiring patterns formedby the copper-plating are connected electrically to each other by theinner vias.

[0019] Thus, in addition to the above-mentioned effects, it is possibleto use the existing plating technique as it is, and it is also possibleto make the surface wiring layer and insulating layer to be thin.Therefore, a component built-in module with a smaller thickness can berealized.

[0020] Furthermore, it is preferable that the component built-in moduleof the present invention includes a core layer formed of an electricinsulating material; an electric insulating layer formed of an organicfilm having a thermosetting resin on both surfaces, which is formed onat least one surface of the core layer; and a plurality of wiringpatterns formed of a copper foil; wherein the core layer has a pluralityof wiring patterns formed of a copper foil and a plurality of inner viasformed of a conductive resin, and the wiring patterns are connectedelectrically to each other by the inner vias.

[0021] Thus, a high-density and thin surface wiring layer can be formed,and a surface that has excellent surface smoothness can be achieved bythe organic film. Similarly, since the excellent thickness precision canbe achieved, an impedance control of the surface wiring layer can becarried out with high accuracy, and thus a component built-in module forhigh frequency can be realized.

[0022] Furthermore, it is preferable that the component built-in moduleof the present invention includes a core layer formed of an electricinsulating material; and a ceramic substrate having a plurality ofwiring patterns and inner vias adhered onto at least one surface of thecore layer; wherein the core layer has a plurality of wiring patternsformed of a copper foil and a plurality of inner vias formed of aconductive resin.

[0023] Thus, it is possible to obtain a module that contains components,has an excellent thermal radiation property or air-tightness, andcontains a capacitor having a high dielectric constant.

[0024] Furthermore, it is preferable that the component built-in moduleof the present invention includes a core layer formed of an electricinsulating material; and a plurality of ceramic substrates having aplurality of wiring patterns and inner vias adhered onto at least onesurface of the core layer; wherein the core layer has a plurality ofwiring patterns formed of a copper foil and a plurality of inner viasformed of a conductive resin; and the plurality of ceramic substratesinclude dielectric materials having different dielectric constants.

[0025] Thus, it is possible to laminate different kinds of layers, thatis, a ceramic capacitor with high dielectric constant and a ceramicsubstrate with low dielectric constant suitable for a high-speedcircuit. In particular, for the high-speed wiring layer, a ceramic layerwith a small transfer loss can be used, while for a portion requiring abypass capacitor, a ceramic layer with high dielectric constant can beused.

[0026] Furthermore, in the component built-in module of the presentinvention, it is desirable that a film-shaped passive component isdisposed between the wiring patterns formed on at least one surface ofthe core layer. Thus, it is possible to realize a three-dimensionalmodule in which components are contained with higher density.

[0027] Furthermore, in the component built-in module of the presentinvention, it is desirable that the film-shaped passive component is atleast one selected from the group consisting of a resistor, a capacitorand an inductor formed of a thin film or a mixture including aninorganic filler and a thermosetting resin. It is advantageous because athin film can provide an excellent performance passive component.Furthermore, a film-shaped component including an inorganic filler and athermosetting resin can be produced easily and is excellent inreliability.

[0028] Furthermore, in the component built-in module of the presentinvention, it is desirable that the film-shaped passive component is asolid electrolytic capacitor formed of at least an oxide layer ofaluminum or tantalum and a conductive macromolecule.

[0029] Furthermore, a method for producing a component built-in moduleof the present invention includes: processing a mixture including atleast an inorganic filler and an uncured state thermosetting resin intoa sheet; providing the sheet material including an inorganic filler andan uncured state thermosetting resin with a through hole; filling thethrough hole with a conductive resin; mounting an active componentand/or passive component on a copper foil; and superimposing the sheetmaterial in which the through hole is filled with a conductive resinonto the surface of the copper foil on which the components are mounted.This is followed by superimposing a copper foil; burying the activeand/or passive component in the sheet material, followed by heating andpressing the sheet material, thereby curing the thermosetting resin andthe conductive resin in the sheet material; then processing the copperfoil on the outermost layer into a wiring pattern, thereby forming acore layer; and providing a through hole to a sheet including aninorganic filler and an uncured state thermosetting resin or an organicfilm having adhesive layers on both surfaces. This is followed bysuperimposing the copper foil, and the sheet or the organic film inwhich the through hole is filled with a conductive resin onto at leastone surface of the core layer, followed by heating and pressing thereofso as to be integrated onto each other; and processing the copper foilinto a wiring pattern.

[0030] According to such a method, since it is possible to bury anactive component such as a semiconductor etc. and a passive componentsuch as a chip resistor, a chip capacitor, etc. in an internal portionand also to mount components onto the outer layer portion, an extremelyhigh-density and small size module can be realized. Furthermore, since awiring pattern can be formed also on the surface portion of the corelayer, a further high-density module can be realized. Furthermore, sincea material of the surface portion can be selected, the thermalconductivity, dielectric constant, coefficient of thermal expansion,etc. can be controlled.

[0031] Furthermore, in the method for producing the component built-inmodule of the present invention, it is preferable that a film-shapedcomponent is formed beforehand on the copper foil that is to besuperimposed onto the core layer.

[0032] Furthermore, the method for producing a component built-in moduleof the present invention includes: processing a mixture including atleast an inorganic filler and an uncured state thermosetting resin intoa sheet; providing a through hole to the sheet material including aninorganic filler and an uncured state thermosetting resin; filling thethrough hole with a conductive resin; forming a wiring pattern on onesurface of a release carrier; and mounting an active component and/orpassive component on the wiring pattern of the release carrier. This isfollowed by superimposing a sheet material in which the through hole isfilled with a conductive resin onto the surface of the release carrierhaving a wiring pattern on which the component is mounted; burying andintegrating the active component and/or passive component into the sheetmaterial, followed by further heating and pressing thereof, therebycuring the thermosetting resin and the conductive resin in the sheetmaterial; then peeling off the release carrier on the outermost portion,thereby forming a core layer; and providing a through hole to a sheetincluding an inorganic filler and an uncured state thermosetting resinor an organic film having adhesive layers on both surfaces. This isfollowed by superimposing the release carrier having a wiring pattern,and the sheet or the organic film in which the through hole is filledwith the conductive resin onto at least one surface of the core layer,followed by heating and pressing thereof so as to be integrated intoeach other; and peeling off the release carrier.

[0033] According to such a method, since it is possible to bury anactive component such as a semiconductor etc. and a passive componentsuch as a chip resistor, a chip capacitor, etc. in an internal portionand also to mount further components onto the outer layer portion, anextremely high-density and small size module can be realized.Furthermore, since a wiring pattern can be formed on the surface portionby a transferring process, a treatment such as etching after the curingprocess is not necessary, thus making the method simple from anindustrial viewpoint.

[0034] Furthermore, in the method for producing the component built-inmodule of the resent invention, it is preferable that a film-shapedcomponent is formed on the wiring pattern formed beforehand on therelease carrier on which the wiring pattern is formed to be superimposedonto the core layer.

[0035] Furthermore, in the method for producing the component built-inmodule of the resent invention, it is preferable that the film-shapedcomponent is at least one selected from the group consisting of aresistor, a capacitor and an inductor, which is formed of a thin film ora mixture including an inorganic filler and a thermosetting resin; andthe film-shaped component is formed by one method selected from thegroup consisting of vapor deposition method, MO-CVD method or a thickfilm printing method.

[0036] Furthermore, the method for producing a component built-in moduleof the present invention includes: processing a mixture including atleast an inorganic filler and an uncured state thermosetting resin intoa sheet; providing a through hole to the sheet material including aninorganic filler and an uncured state thermosetting resin; filling thethrough hole with a conductive resin; and mounting an active componentand/or passive component on a copper foil. This is followed bysuperimposing the sheet material in which the through hole is filledwith a conductive resin onto the surface of the copper foil on which thecomponents are mounted; furthermore superimposing a copper foil; buryingthe active and/or passive component in the sheet material, followed byheating and pressing the sheet material, thereby curing thethermosetting resin and the conductive resin in the sheet material; thenprocessing the copper foil on the outermost layer into a wiring pattern,thereby forming a core layer; and providing a through hole to a sheetincluding an inorganic filler and an uncured state thermosetting resinor an organic film having adhesive layers on both surfaces. This isfollowed by superimposing the copper foil, and the sheet or the organicfilm in which the through hole is filled with a conductive resin onto atleast one surface of the core layer, followed by heating and pressingthereof so as to be cured; and then forming a through hole that extendsthrough the core layer so as to form a through hole by copper-plating.

[0037] Thus, since this method can use a conventional through holetechnique as it is, based on the core layer containing the components,it is advantageous in industrial viewpoint.

[0038] Furthermore, the method for producing a component built-in moduleof the present invention includes: processing a mixture including atleast an inorganic filler and an uncured state thermosetting resin intoa sheet; providing a through hole to the sheet material including aninorganic filler and an uncured state thermosetting resin; filling thethrough hole with a conductive resin; forming a wiring pattern on onesurface of a release carrier; and mounting an active component and/orpassive component on the wiring pattern of the release carrier. This isfollowed by superimposing a sheet material in which the through hole isfilled with a conductive resin onto the surface of the release carrierhaving a wiring pattern on which the component is mounted; burying andintegrating the active component and/or passive component into the sheetmaterial, followed by further heating and pressing thereof, therebycuring the thermosetting resin and the conductive resin in the sheetmaterial; then peeling off the release carrier on the outermost portion,thereby forming a core layer; and providing a through hole to a sheetincluding an inorganic filler and an uncured state thermosetting resinor an organic film having adhesive layers on both surfaces. This isfollowed by superimposing the release carrier having a wiring pattern onone surface, and the sheet or the organic film in which the through holeis filled with a conductive resin onto at least one surface of the corelayer, followed by heating and pressing thereof so as to be cured; andthen forming a hole that extends through the core layer and carrying outcopper-plating thereof to form a through hole.

[0039] Thus, since this method can use a conventional through holetechnique as it is, based on the core layer containing the components,it is advantageous in industrial viewpoint.

[0040] Furthermore, the method for producing a component built-in moduleof the present invention includes: processing a mixture including atleast an inorganic filler and an uncured state thermosetting resin intoa sheet; providing a through hole to the sheet material including aninorganic filler and an uncured state thermosetting resin; filling thethrough hole with a conductive resin; forming a wiring pattern on onesurface of the release carrier; and mounting an active component and/orpassive component on a wiring pattern of the release carrier. This isfollowed by superimposing the sheet material in which the through holeis filled with a conductive resin onto the surface of the releasecarrier having a wiring pattern on which the components are mounted;further superimposing a copper foil and heating and pressing in thetemperature range in which the thermosetting resin is not cured; buryingand integrating the active components and/or passive components into thesheet material, thereby forming a core layer; peeling off the releasecarrier from the core layer; and superimposing the ceramic substrate inwhich at least two or more of inner vias and wiring patterns arelaminated onto at least one surface of the core layer from which therelease carrier is peeled off, followed by pressing thereof, therebycuring the thermosetting resin in the core layer to be adhered to theceramic substrate.

[0041] According to such a method, similar to the above, an extremelyhigh-density and small size module can be realized. Furthermore, sinceit is possible to integrate an excellent ceramic substrate with variousperformances, a further high-performance module can be realized.

[0042] Furthermore, in the method for producing the component built-inmodule of the present invention, it is desirable that a plurality ofceramic substrates having a plurality of wiring patterns and the innervias are laminated simultaneously via the core layer and the adhesivelayer. Thus, various kinds of ceramic substrates can be laminatedsimultaneously, providing an extremely simple method.

BRIEF DESCRIPTION OF THE DRAWINGS

[0043]FIG. 1 is a cross-sectional view showing a component built-inmodule having a multilayer structure according to one embodiment of thepresent invention.

[0044]FIG. 2 is a cross-sectional view showing a component built-inmodule having a multilayer structure according to one embodiment of thepresent invention.

[0045]FIG. 3 is cross-sectional view showing a component built-in modulehaving a multilayer structure according to one embodiment of the presentinvention.

[0046]FIG. 4 is cross-sectional view showing a component built-in modulehaving a multilayer structure according to one embodiment of the presentinvention.

[0047]FIG. 5 is cross-sectional view showing a component built-in modulehaving a multilayer structure according to one embodiment of the presentinvention.

[0048]FIGS. 6A to 6H are cross-sectional views showing a process forproducing a component built-in module having a multilayer structureaccording to one embodiment of the present invention.

[0049]FIGS. 7A to 7I are cross-sectional views showing a process forproducing a component built-in module having a multilayer structureaccording to one embodiment of the present invention.

[0050]FIGS. 8A to 8D are cross-sectional views showing a process forproducing a component built-in module having a multilayer structureaccording to one embodiment of the present invention.

[0051]FIG. 9 is a graph showing temperature characteristics of a modulusof elasticity of an electric insulating material of a component built-inmodule.

[0052]FIG. 10 is a graph showing a modulus of elasticity E′ and Tans ofthe electric insulating material of a component built-in moduleaccording to one embodiment of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0053] As a first embodiment, the present invention provides a componentbuilt-in module in which one or more of active components and/or passivecomponents are contained in an internal portion of an electricalinsulating substrate formed of a mixture obtained by adding an inorganicfiller into an uncured thermosetting resin at high density; and aplurality of electric insulating layers and wiring patterns are formedon at least one surface of a core layer having a plurality of wiringpatterns and inner vias formed of a conductive resin for electricallyconnecting the wiring patterns. In this module, the active components orpassive components are contained, the wiring patterns are connected toeach other by the inner vias formed of a conductive resin, and thewiring patterns are formed in a multilayer structure on the core layercontaining components. Thus, extremely high-density mounting can berealized. Furthermore, by selecting an inorganic filler, a coefficientof thermal expansion in the plane direction that is the same as that ofa semiconductor and high thermal conductivity can be obtained.Furthermore, since the module has a modulus of elasticity at roomtemperature of the electric insulating material formed of a mixtureincluding an inorganic filler and a thermosetting resin of the corelayer in which at least one of active components and/or passivecomponents are contained in the range from 0.6 GPa to 10 GPA and thethermosetting resin is formed of a plurality of thermosetting resinshaving different glass transition temperatures, it is possible to obtaina component built-in module that is a strong with respect to stress dueto the thermal shock of the built-in components, even if componentshaving various coefficients of thermal expansion are present.

[0054] The component built-in module of the present invention is amixture in which an inorganic filler is added into a thermosettingresin. It is not necessary to fire at high temperature unlike the casewhere a ceramic substrate is used. The component built-in module can beobtained by heating at a low temperature of about 200° C. Furthermore,as compared with a conventional resin substrate, it has a special effectthat the coefficient of thermal expansion, thermal conductivity,dielectric constant, etc. can be controlled arbitrarily. The componentbuilt-in module of the present invention may have a configuration havinga through hole through the core layer and the multilayer wiring layer.With such a configuration, it is possible to form a component built-inmodule with extremely low interlayer resistance, which is suitable for acomponent built-in ultraminiature power module. Similarly, in the casewhere a mixture including an inorganic filler and a thermosetting resinfor the electric insulating layer is formed in a multilayer structure onthe core layer, similar to the core layer, it is possible to control thecoefficient of thermal expansion, thermal conductivity and dielectricconstant.

[0055] Furthermore, as a second embodiment, the present inventionprovides a component built-in module having a structure in which one ormore of active components and/or passive components are contained in anelectrical insulating substrate formed of a mixture including at leastan inorganic filler and a thermosetting resin, and a ceramic substratehaving a wiring pattern and an inner via is adhered to at least onesurface of a core layer having a plurality of wiring patterns formed ofa copper foil and inner vias formed of a conductive resin. Thus,components can be contained with high density and various performancesof the ceramic substrate can be obtained. In other words, the ceramicsubstrate enables the high-density wiring, as well as to make itpossible to control the dielectric constant from about 3 to 10000 andfurther to obtain a large thermal conductivity. The component built-inmodule has a special effect that such performances can be utilized as itis. Furthermore, by using the thermosetting resin having theabove-mentioned range of a specific modulus of elasticity and a glasstransition temperature, even if the ceramic substrates have differentperformances and physical properties, it can be laminated withoutstress. Furthermore, it is possible to realize a module having a highreliability in which cracks generated by stress such as a thermal shocketc. are reduced or eliminated.

[0056] Furthermore, as a third embodiment, the present inventionprovides a component built-in module having a structure in which one ormore of active components and/or passive components are contained in aninternal portion of an electrical insulating material formed of amixture including at least an inorganic filler and a thermosettingresin; a plurality of electric insulating layers and wiring patterns areformed on at least one surface of the core layer having a plurality ofwiring patterns and inner vias formed of a conductive resin; andfilm-shaped active components are formed between wiring patterns formedon the core layer. Thus, since components can be contained at highdensity and a film-shaped component can be formed also on the wiringlayer formed on the core layer, the component built-in module withextremely high mounting density can be obtained. The film-shapedcomponents may be a resistor, a capacitor and an inductor, and lead outthe wiring pattern formed on the core layer as an electrode. Theresistor, capacitor or inductor can be formed in an arbitrary shape by athick film printing method or vapor deposition method.

[0057] Furthermore, a fourth embodiment of the present invention relatesto a method for producing a component built-in module. The methodincludes: processing a mixture including an inorganic filler and anuncured state thermosetting resin into a sheet; preparing a sheetmaterial in which a through hole is formed and the through hole isfilled with a conductive resin; superimposing a copper foil on which theactive components and/or passive components are mounted onto the sheetmaterial prepared by the above-mentioned process; further superimposinga copper foil thereon to bury the active components and/or passivecomponents in the above-mentioned sheet material; curing thereof to forma core layer; and processing the copper foil on the outermost layer intoa wiring pattern. Next, a sheet including an inorganic filler and anuncured state thermosetting resin or an organic film in which adhesivesare formed on both surfaces thereof is provided with a through hole; andthe sheet or the organic film in which the through hole is filled with aconductive resin is superimposed onto the copper foil of the core layer,followed by heating and pressing thereof so as to be integrated.Furthermore, a copper foil is processed into a wiring pattern.

[0058] Furthermore, a fifth embodiment of the present invention relatesto a method for producing a component built-in module. The methodincludes: processing a mixture including an inorganic filler and anuncured state thermosetting resin into a sheet; providing the sheetmaterial including an inorganic filler and an uncured statethermosetting resin with through holes; and filling the through holeswith a conductive resin. On the other hand, a wiring pattern is formedon one surface of the release carrier and active components and/orpassive components are mounted on the wiring pattern. Then, the sheetmaterial in which the through hole is filled with the thermosettingresin is superimposed onto the surface on the side where components aremounted of the release carrier having a wiring pattern. Furthermore, acopper foil is superimposed thereon, followed by heating and pressingthereof at temperatures in the range in which the thermosetting resin isnot cured so as to allow the active components and/or passive componentsto be buried in the sheet material to be integrated; thereby forming acore layer. Furthermore, the release carrier is peeled off from the corelayer and a ceramic substrate including at least two layers or more ofinner vias and wiring patterns is provided on one surface of the corelayer from which the releaser carrier was peeled off and is superimposedand pressed, thereby curing the thermosetting resin in the core layerand adhering it to the ceramic substrate.

[0059] In the above-mentioned embodiments, the ceramic substrate may bea laminated capacitor with high dielectric constant, or substratesformed of two kinds of ceramic materials may be adhered simultaneouslyto form a ceramic substrate. By adhering the ceramic capacitor with highdielectric constant and the ceramic substrate for high-speed circuitwith a low dielectric constant to the core layer containing components,a component built-in module for high frequency can be obtained.

[0060] Next, the specific embodiment of a component built-in module anda method for producing the same will be explained with reference to theaccompanying drawings.

[0061]FIG. 1 is a cross-sectional view showing a configuration of acomponent built-in module of the present invention. In FIG. 1, referencenumeral 100 denotes a wiring pattern formed on a core layer 105, and 101denotes a bare semiconductor chip that is an active component mounted onthe wiring pattern 100. Furthermore, reference numeral 104 denotes achip component that is a passive component similarly mounted on thewiring pattern 100 and 102 denotes an electric insulating layer formedof a composite material composed of an inorganic filler and athermosetting resin. Reference numeral 103 denotes an inner via forelectrical connection between the wiring patterns 100 formed on the corelayer 105. Furthermore, reference numeral 106 denotes an electricinsulating layer formed on the core layer 105, 108 denotes a wiringpattern, and 107 denotes an inner via. The inner via 107 and the wiringpattern 108 are formed on the outermost layer. As shown in FIG. 1, sinceit is possible to contain the semiconductor 101 or the chip component104 inside and to mount a further component on the surface of the wiringpattern 108, an extremely high-density mounted module can be obtained.

[0062] An example of the thermosetting resin includes an epoxy resin, aphenol resin and a cyanate resin. At this time, a method for controllinga modulus of elasticity and a glass transition temperature of thethermosetting resin at room temperature includes a method of adding aresin having a low modulus of elasticity and low glass transitiontemperature at room temperature with respect to the resin composition.Furthermore, an example of the inorganic filler includes Al₂O₃, MgO, BN,AlN, SiO₂, and the like. Furthermore, if necessary, a coupling agent, adispersant, a coloring agent and a releasing agent may be added to thecomposite material including an inorganic filler and a thermosettingresin.

[0063]FIG. 2 is a cross-sectional view showing another configuration ofa component built-in module of the present invention. In FIG. 2,reference numeral 209 denotes a through hole formed in such a manner toextend through the core layer 205 and the wiring layer formed on thecore layer 205. The extending through hole 209 allows the core layer 205and the wiring patterns 208 formed on the both surfaces of the corelayer to be connected each other electrically. Thus, this module can beapplied to a power module requiring a large electric current. Thethrough hole 209 can be formed by carrying out a processing with a drillor a laser processing; forming a conductive layer on the wall surface ofthe through hole by an electrolytic copper-plating method; and furtherforming a wiring pattern by photolithography and a chemical etchingprocess.

[0064]FIG. 3 is a cross-sectional view showing another configuration ofa component built-in module of the present invention. In FIG. 3,reference numeral 305 denotes an electric insulating layer formed on acore layer 304, and 306 denotes a wiring pattern formed on the electricinsulating layer 305. As the electric insulating layer 305, aphotosensitive insulating resin may be used. The electric insulatinglayer 305 can be formed by laminating a resin film or by coating aliquid photosensitive resin by using a coater. For example, the electricinsulating layer 305 can be formed by processing the film-shapedphotosensitive resin to form an inner via 307 by photolithography so asto make an open portion; then forming a wiring layer by electrolesscopper-plating or electrolytic copper-plating; and then forming a wiringpattern 306 by the existing photolithography. Furthermore, by repeatingthis process, a multilayer-structured wiring layer can be obtained andthe inner via 307 can be formed by using the open portion formed on theelectric insulating layer 305. Furthermore, by roughening the electricinsulating layer before carrying out the electroless copper-plating, theadhesion strength of the copper wiring pattern 306 can be enhanced.

[0065]FIG. 4 is a cross-sectional view showing another configuration ofa component built-in module of the present invention. Similar to FIG. 1,FIG. 4 includes a wiring pattern 407 formed on a core layer 404containing a semiconductor 401, an inner via 406 and an electricinsulating layer 405. Furthermore, the module of FIG. 4 includes afilm-shaped component that leads out the wiring pattern 407 formed onthe core layer 404 as an electrode. Reference numeral 409 denotes afilm-shaped component that is a resistor; and 408 denotes a film-shapedcomponent that is a capacitor. Thus, it is possible to realize anextremely high-density component built-in module in which furtherfilm-shaped components 408 and 409 are formed on the core layer 404containing the components.

[0066]FIG. 5 is a cross-sectional view showing another configuration ofa component built-in module of the present invention. Similar to FIG. 1,FIG. 5 has a configuration in which a core layer 505 containing asemiconductor 501 and a multilayer ceramic substrate 509 obtained bysimultaneously firing a sintered inner via 508, a wiring pattern 507 anda ceramic material layer 506 are adhered to each other with a sheetmaterial 510 provided with an inner via 511 for electrical connection.The module of FIG. 5 further includes a sheet material 512 having ainner via 513 and a wiring pattern 514, which are formed on the lowerpart of the ceramic substrate 509. On the wiring pattern 514, asoldering ball 515 is formed. Thus, a high-density component built-inmodule can be obtained. By integrating with the ceramic substratecapable of high-density wiring and having various performances, acomponent built-in module with higher performance can be obtained.

[0067]FIGS. 6A to 6H are cross-sectional views showing a process forproducing the component built-in module. In FIG. 6A, reference numeral602 denotes a sheet obtained by processing a mixture including aninorganic filler and an uncured state thermosetting resin into a sheet;forming through holes in the sheet; and then filling an inner via 603with a conductive paste. The sheet material 602 is produced as follows:a paste kneaded product is produced by mixing an inorganic filler with aliquid thermosetting resin, or by mixing an inorganic filler with athermosetting resin whose viscosity is reduced with a solvent; and thenthe paste kneaded product is molded to a certain thickness and subjectedto a heat treatment. Thus, the sheet material 602 is obtained.

[0068] The kneaded product using the liquid resin may have tackiness. Inthis case, the heat treatment allows the tackiness of the kneadedproduct to be eliminated while maintaining the flexibility in a state inwhich the kneaded product is in an uncured state or a state in which itwas cured to some extent. Furthermore, in the case of the kneadedproduct in which the resin is dissolved in the solvent, the solvent isremoved and then the tackiness is eliminated while maintaining theflexibility similarly in an uncured state. The uncured state sheetmaterial 602 prepared by the above-mentioned process can be providedwith a through hole by a laser processing or by a mold processing or bypunching. In particular, in the laser processing, it is effective to usea carbon dioxide gas laser or an excimer laser from the viewpoint of theprocessing speed. An example of the conductive paste includes a materialobtained by kneading powder of gold, silver and copper as a conductivematerial with the same thermosetting resin as that used in the sheetmaterial 602. Copper is particularly effective because it is excellentin conductivity and has less migration. Furthermore, as thethermosetting resin, a liquid epoxy resin is stable from the aspect ofthe heat resistance property.

[0069]FIG. 6B shows a state in which active components such as asemiconductor 601 or a chip component 604 are mounted on a copper foil600. At this time, the semiconductor 601 is electrically connected tothe copper foil 600 via a conductive adhesive. A copper foil 600 havinga thickness of about 18 μm to 35 μm and produced by electrolytic platingcan be used. In particular, the copper foil whose surface that is incontact with the sheet material 602 is roughened is desirable forimproving the adhesion with the sheet material 602. Furthermore, thecopper foil whose surface has been subjected to a coupling treatment orplated with tin, zinc or nickel may be used in order to improve theadhesion property and oxidation resistance. As the adhesive forflip-chip mounting of the semiconductor 601, an adhesive obtained bykneading gold, silver, copper, silver-palladium alloy, or the like witha thermosetting resin can be used. Instead of the conductive adhesive, abump produced by a solder bump or a gold wire bonding may be formed onthe side of the semiconductor 601 beforehand, and the semiconductor 601can be mounted on the copper foil by the use of melting by a heattreatment. Furthermore, the solder bump can be used together with theconductive adhesive.

[0070] Next, in FIG. 6C, reference numeral 600 denotes a copper foilthat was prepared separately. FIG. 6C shows a state in which the sheetmaterial 602 produced in the above-mentioned process and the copper foil600 on which the semiconductor 601 and the chip component 604 aremounted are superimposed.

[0071] Next, FIG. 6D shows a state in which the product that wassuperimposed is heated and pressed by a press, so that the semiconductor601 and the chip component 604 are buried to be integrated into thesheet material 602. At this time, the components are buried in a statebefore the thermosetting resin in the sheet material 602 is cured, andfurther heating is carried out to be cured and thus the thermosettingresin in the sheet 602 and the thermosetting resin in the conductiveresin are cured completely. This process allows the sheet material 602,the semiconductor 601, the chip component 604 and the copper foil 600 beadhered strongly to each other mechanically. Similarly, the conductivepaste is cured for an electrical connection between the copper foils600. Next, as shown in FIG. 6E, the copper foil on the surface of thesubstrate in which the thermosetting resin is cured and thesemiconductor 601 is buried and integrated is processed into a wiringpattern 600. Thus, a core layer 605 is formed. FIG. 6F shows a state inwhich the core layer 605 is sandwiched between sheet materials 606formed of a mixture including an inorganic filler and an uncured statethermosetting resin or organic films having adhesive layers on bothsurfaces, on which a through hole is formed and the through hole isfilled with a conductive paste; and then the copper foils 608 arefurther superimposed thereon. Then, heating and pressing are carriedout, thereby forming a wiring layer on both surfaces of the core layer605 as shown in FIG. 6G. Then, as shown in FIG. 6H, the adhered copperfoils 608 are subjected to a chemical etching so as to form a wiringpattern 609. Thus, a component built-in module can be obtained.Thereafter, steps for mounting components by soldering or filling of aninsulating resin are carried out, but such steps are not essentialherein, so the explanation therefor is omitted herein.

[0072]FIGS. 7A to 7I are cross-sectional view showing a method forproducing a component built-in module produced by the use of the sheetmaterial 704 produced by the same method as described with reference toFIG. 6. In FIG. 7A, a wiring pattern 701 and a film-shaped component 711are formed on a release carrier 700. The film-shaped component 711 leadsout the wiring pattern 701 as an electrode. The release carrier 700 isreleased after the wiring pattern 701 and the film-shaped component 711are transferred. For example, an organic film such as polyethylene,polyethylene terephthalate or the like, or a metal foil of copper etc.can be used for the release carrier. The wiring pattern 701 can beformed by attaching a metal foil such as a copper foil to the releasecarrier 700 via an adhesive, or by further forming a wiring pattern byelectrolytic plating on the metal foil, or the like. The metal layerthat was formed in a film shape like this can be formed into a wiringpattern 701 by the xisting method such as a chemical etching method etc.FIG. 7B shows a state in which a semiconductor 702 or a chip component703 is mounted on the wiring pattern 701 formed on the release carrier700. FIG. 7C shows a sheet material 704 produced by the same method asdescribed with reference to FIG. 6. FIG. 7D shows a state in which athrough hole is processed and an inner via 705 is filled with aconductive paste by the same method as described with reference to FIG.6. FIG. 7E shows a state in which the prepared sheet material 704provided with the inner via 705 filled with a conductive paste preparedby the above-mentioned method is sandwiched between the release moldcarrier 700 on which the wiring patterns 701 are formed and the releasecarrier 700 on which the components are mounted in a suitable position.FIG. 7F shows a state in which heating and pressing are carried out soas to cure the thermosetting resin in the sheet material 704 and to peeloff the release carrier 700. This heating and pressing allows thesemiconductor 702 and chip component 703 to be buried and integratedinto the sheet material 704. The semiconductor 702 and the chipcomponent 703 are buried in the sheet material 704 in a state before thesheet material 704 is cured, and further heating is carried out to becured, and thus the thermosetting resin in the sheet material 704 andthe thermosetting resin of the conductive paste are cured completely.This process allows the sheet material 704, the semiconductor 702 andwiring pattern 701 to be adhered strongly to each other mechanically.Similarly, by curing the conductive paste in the inner via 705, thewiring pattern 701 can be connected electrically. At this time, due tothe thickness of the wiring pattern 701 on the release carrier 700, thesheet material 704 is further compressed, so that the wiring pattern 701also is buried in the sheet material 704. Thus, a component built-incore layer 706 in which the surfaces of the wiring pattern and themodule are smooth can be formed.

[0073] Next, in FIG. 7G, the component built-in core layer 706 producedby the above-mentioned process is sandwiched between the sheet material707 produced according to the method described with reference to FIG. 7Dand the release carrier 710 on which a film-shaped component 711 isformed in a suitable position, followed by heating and pressing. Thus,the multilayer module can be produced as shown in FIG. 7H. Finally, asshown in FIG. 7I, by peeling off the release carrier 710, the multilayermodule of the present invention can be produced. Thus, by using the corelayer in which the semiconductor and the chip component are containedand the release carrier on which the wiring pattern and film-shapedcomponents are formed, it is possible to obtain a component built-inmodule having higher density and various functions.

[0074]FIGS. 8A to 8D show cross-sectional views showing a process forproducing a component built-in module obtained by laminating onto amultilayer ceramic substrate. FIG. 8A shows a core layer 805 in whichcomponents are contained, which is shown in FIG. 6E. Then, FIG. 8B showsa state in which the core layer 805 and a multilayer ceramic substrate809 are used and a sheet material provided with an inner via 811 and asheet material similarly provided with the inner via 813 aresuperimposed as shown in FIG. 8B and then a copper foil 814 is furthersuperimposed. Next, as shown in FIG. 8C, by heating and pressing thelaminate the thermosetting resins in the sheet materials 810 and 812 arecured, so that the core layer 805 and the multilayer ceramic substrate809 and copper foil 814 are strongly adhered to each other mechanically.As shown in FIG. 8D, by finally processing the copper foil 814 into awiring pattern and by providing a solder ball 815, a component built-inmodule in which the multilayer ceramic and the component built-in corelayer are integrated is completed. Furthermore, the multilayer ceramicwiring substrate is formed by using a green sheet formed of lowtemperature firing material mainly including glass and alumina. Namely,the green sheet capable of firing at about 900° C. is provided with athrough hole and the through hole is filled with a conductive pasteincluding a highly conductive powder such as copper and silver, andfurthermore, the wiring pattern is formed by printing a similarconductive paste. A plurality of the green sheets formed by theabove-mentioned process are laminated and further fired so as to formthe low temperature firing material. The ceramic substrate materialproduced by the above-mentioned process may use a high dielectricmaterial mainly including barium titanate, a high thermal conductivematerial mainly including aluminum titanate, etc., or the like.Furthermore, the wiring pattern of the outermost layer of the ceramiclaminate may be formed or only ceramic laminate may be formed withoutforming the wiring pattern. Furthermore, in FIGS. 8D to 8A, one ceramicsubstrate was used. However, a plurality of substrates containingvarious kinds of ceramic materials may be laminated simultaneously.

[0075] Hereinafter, the present invention will be explained in detail byway of examples.

EXAMPLE 1

[0076] In the production of a component built-in module of the presentinvention, first, a method for producing a sheet material including aninorganic filler and a thermosetting resin will be explained. The sheetmaterial used in this example is prepared by, at first, mixing aninorganic filler and a liquid thermosetting resin with an agitator. Theagitator used in this example operates in such a manner that aninorganic filler, a liquid thermosetting resin, and if necessary, asolvent for adjusting the viscosity of the mixture are placed in apredetermined amount in a container, and the container itself is rotatedwhile stirring the mixture in the container. The mixture obtained shouldbe dispersed sufficiently, even if the mixture has a relatively highviscosity. Tables 1 and 2 show the composition mixed in the sheetmaterial for the component built-in module in this example. TABLE 1Composition of thermosetting resin thermosetting resin 1 thermosettingresin 2 wt. wt. content % Tg(° C.) content % Tg(° C.) case 1 epoxy resin10 75 — — — (6041)*1 case 2 epoxy resin 5 50 epoxy resin 5 130(WE-2025)*2 (6018)*5 case 3 epoxy resin 10 110 — — — (Epicure, YH-306)*3Co epoxy resin 10 178 — — — (6099)*4

[0077] TABLE 2 Modulus of elasticity at room composition of inorganicfiller temperature content wt. % (GPa) case 1 alumina powder (AS-40)*190 0.72 average particle diameter: 12 μm case 2 alumina powder (AS-40)*190 7.6 average particle diameter: 12 μm case 3 alumina powder (AS-40)*190 7.7 average particle diameter: 12 μm Co alumina powder (AS-40)*1 9036.5 average particle diameter: 12 μm

[0078] Specifically, a sheet material is produced in the followingmanner. A predetermined amount of the paste mixture with the compositionmentioned above is poured and spread on a release film. Mixing wascarried out under the conditions: a predetermined amount of inorganicfiller and the epoxy resin are placed in a container and were mixed inthe container by a planetary mixer. The planetary mixer operates in sucha manner in which the container itself is rotated while revolving. Thekneading is carried out for a time as short as 10 minutes. Apolyethylene terephthalate film having a thickness of 75 μm was used forthe release film, and the surface of the film was subjected to a releasetreatment with silicon. Then, another release film was superimposed ontothe mixture on the release film that had been poured and spread,followed by pressing with a pressurizing press so that the sheet has aconstant thickness. Next, the release film on one surface was peeled offand was heated together with the release film under the conditions thatallow the elimination of the tackiness of the sheet by removing thesolvent. The heat treatment is carried out under the conditions:temperature of 120° C. and holding time of 15 minutes. Thus, theabove-mentioned mixture is formed into a sheet material having athickness of 500 μm and not having tackiness. The thermosetting epoxyresin used in this example starts to be cured at 130° C., and thereforethe epoxy resin was in an uncured state (B stage) under theabove-mentioned heat treatment condition, and the resin can be meltedagain by a heat treatment in subsequent processes.

[0079] In order to evaluate the physical properties of the sheetmaterial produced by the above-mentioned process, a thermal pressing wascarried out and the cured product of the sheet was produced. Then, amodulus of elasticity and glass transition temperature of the curedproduct were measured. The thermal pressing was carried out under theconditions: the produced sheet was sandwiched between the release filmsand was subjected to a thermal pressing at 200° C. and a pressure of 4.9MPa for 2 hours. The modulus of elasticity and glass transitiontemperature (Tg) of the cured product at room temperature are shown inthe above-mentioned Tables 1 and 2, and the temperature characteristicsof the modulus of elasticity are shown in FIG. 9, respectively. As shownin Tables 1 and 2, the modulus of elasticity of the cured product atroom temperature ranges between about 0.7 GPa and about 8 GPa. As acomparative example, the cured product using an epoxy resin having amodulus of elasticity of 36.5 GPa was prepared. Furthermore, as in thecase 2, a cured product in which an epoxy resin having a different glasstransition temperature was added also was evaluated. The glasstransition temperature was calculated from Tan δ representing theviscosity behavior of the modulus of elasticity based on the temperaturecharacteristics of the modulus of elasticity E′ as shown in FIG. 10.FIG. 10 shows the temperature characteristics of the modulus ofelasticity E′ of the case 2. From an inflection point of Tan δ, it isconfirmed that the glass transition temperature of this mixture is 50°C. and 130C.°, respectively.

[0080] The uncured sheet material having the above-mentioned physicalproperty was cut into a predetermined size, and through holes having adiameter of 0.15 mm were formed at constant pitch of 0.2 mm to 2 mm byusing a carbon dioxide gas laser. The through holes were filled with aconductive paste by a screen printing method. The through holes werefilled with a kneaded product including 85 wt % of spherical copperparticles having an average particle diameter of 2 μm as a conductivepaste for filling via holes, 3 wt % of bisphenol A epoxy resin (“Epicoat828” manufactured by Yuka Shell Epoxy) and 9 wt % of glycidyl esterbased epoxy resin (“YD-171” manufactured by Toto Kasei) as a resincomposition, and 3 wt % of amine adduct hardening agent (“MY-24”manufactured by Ajinomoto Co., Inc.) as a hardening agent by using atriple roll (see FIG. 6A). Next, a semiconductor 601 and a chipcomponent 604 are flip-chip mounted onto a 35 μm-thick copper foil 600whose one surface was roughened with a conductive adhesive including asilver powder and an epoxy resin. The sheet material is sandwichedbetween the copper foil 600 produced by the above-mentioned process onwhich the semiconductor was mounted and another prepared 35 μm-thickcopper foil 600 whose one surface was roughened in a suitable position.At this time, the roughened surface of the copper foil was arranged soas to face the side of the sheet material. Then, heating and pressingwere carried out by a thermal press at a temperature of 120° C. and apressure of 0.98 MPa for 5 minutes. Since the thermosetting resin in thesheet material 602 was softened by heating, the semiconductor 601 and achip component 604 are buried in the sheet material. Then, the heatingtemperature was raised to 175° C. and the state was held for 60 minutes.This heating allowed the production of a core layer 605 in which theepoxy resin in the sheet material and the epoxy resin in the conductiveresin were cured, so that the semiconductor and the copper foils werestrongly connected to the sheet material mechanically, and theconductive paste and the copper foil were adhered to each otherelectrically (through inner-via connection) and mechanically. Then, byetching the surface of the copper foil on which the core layer 605 inwhich the semiconductor was buried, an electrode pattern and a wiringpattern having a diameter of 0.2 mm are formed on the inner via hole.

[0081] The multilayer structure is obtained by using the core layer 605produced as mentioned above. The used sheet material was obtained bycoating the epoxy resin (“EF-450” manufactured by Nippon Rec Co. Ltd.)as an adhesive to the thickness of 5 μm onto the both surfaces of a 25μm-thick aramid film (“Aramica” manufactured by Asahi Kasei) and forminga through hole by using a carbon dioxide gas laser processing machine.The diameter of the through hole was 100 μm and the through hole wasfilled with the above-mentioned conductive paste (see FIG. 6F). Thesheet material processed by the above-mentioned process on which theadhesive layer was formed on the organic film was superimposed on bothsurfaces of the core layer 605. Furthermore, an 18 μm-thick copper foil608 whose one surface was roughened was superimposed, followed byheating and processing thereof. Then, the copper foil 608 of theuppermost layer was processed into a pattern. Thus, the componentbuilt-in module was obtained.

[0082] In order to evaluate the reliability of the component built-inmodule produced by the method in this example, a hygroscopicity reflowtest and a thermal shock test (a temperature cycle test) were conducted.The hygroscopicity reflow test was conducted by allowing the componentbuilt-in module, which was held at a temperature of 85° C. and at ahumidity of 85% for 168 hours, to pass through a belt type reflow testerfor 20 seconds once at a maximum temperature of 240° C. The thermalshock test was conducted by allowing the component built-in module tostand at 125° C. for 30 minutes and then at −40° C. for 30 minutes percycle, and repeating this cycle 1000 times.

[0083] As an evaluation after each test, when the resistance value ofthe inner via connection formed in the component built-in module (100inner vias are connected in series) remained within ±10%, the componentbuilt-in module was evaluated as good. When cut-off or 10% or moreincrease in the connection resistance occurred, the component built-inmodule was evaluated as bad. Furthermore, as an evaluation standard withrespect to the contained components, one without cut-off in theconnecting surface of the built-in module and deterioration of thecomponent performance was evaluated as good, while a component in whichthe electrical connection of the contained component is changed by ±10%or more similar to the inner via connection or a component in which thecomponent performance was changed was evaluated as bad. At this time, novisible cracks were generated in the component built-in module in thisexample, and abnormality was not recognized, even if a supersonic flawdetector was used. For the contained component, chip resistors (20chips), chip capacitors (20 chips) and test semiconductor (1 chip, thenumber of connection terminals: 30) were used. The evaluation of thereliability is shown in Table 3. TABLE 3 Evaluation of reliabilitythermal shock test hygroscopicity reflow (number of bad/ test (number ofbad/ number of test) number of test) reliability reliability reliabilityin reliability in in via contained in via contained *1 (GPa) *2 Tg(° C.)connection component connection component case 1 0.72  75 0/100 0/702/100 1/70 case 2 7.6 50/130 0/100 0/70 0/100 0/70 case 3 7.7 110 1/1000/70 0/100 0/70 Co 36.5 178 12/100  25/70  9/100 34/70 

[0084] As is apparent from Table 3, it is confirmed that when themodulus of elasticity at room temperature is in the range of 0.6 GPa ormore and 10 GPa or less, excellent reliability is obtained. Inparticular, in the comparative example, since the modulus of elasticityat room temperature is high, the deterioration of the inner viaconnection or the contained component were significantly increased dueto a pressure stress at the time of the thermal shock. It is thoughtthat when the modulus of elasticity is high with respect to the pressuregenerated by the difference in the coefficient of thermal expansion, thestress becomes high, which may lead to a cut-off in the connectionportion on which the stress is concentrated. Furthermore, in thecomparative example, since the glass transition temperature is high,even if the modulus of elasticity is high even at high temperature. Onthe other hand, in the cases 1 to 3, relatively high reliability can beobtained. In particular, it is thought that the case 2 using two kindsof epoxy resins having different moduli of elasticity, even if themodulus of elasticity at room temperature is not so low, since themodulus of elasticity is lowered in accordance with the increase of thetemperature (see FIG. 10), high reliability can be maintained.Furthermore, the insulating material of the case 1 in which the modulusof elasticity at room temperature is the lowest shows an excellentperformance in the thermal shock test but shows somewhat inferiorreliability in the reflow test in a moisture state. This reliabilityproblem is practically trivial. However, if the modulus of elasticity isfurther lowered, the hygroscopicity is increased, which leads to aproblem in the hygroscopicity test. As is dear from the above, in orderto obtain a higher reliability, it is good to use epoxy resins having aplurality of moduli of elasticity and glass transition temperatures asin the case 2.

[0085] This shows that the semiconductor and the module are adheredtightly. Furthermore, the inner via connection resistance by aconductive paste both in the core layer and the wiring layer were notchanged from the initial performance.

EXAMPLE 2

[0086] In Example 2, a module containing a semiconductor was made byusing a sheet material same as the case 2 in Example 1.

[0087] A 500 μu-thick sheet material 704 in which a through hole wasfilled with a conductive paste produced under the same conditions asthose in Example 1 was prepared (see FIG. 7D). Next, a 70 μm-thickcopper foil was formed into a release carrier and further a 9 μm-thickcopper was formed on the release carrier by an electrolyticcopper-plating method. A wiring pattern was formed by using this releasecarrier. The release carrier on which the 9 μm-thick copper was formedwas chemical-etched by photolithography so as to form a wiring pattern701 shown in FIG. 7A. A semiconductor and a chip were flip-chip mountedonto the thus produced release carrier with a wiring pattern producedwith a solder bump. Furthermore, a film-shaped component was formed on arelease carrier having another wiring pattern by a printing method. Thefilm-shaped component 711 is a resistance paste obtained by mixing acarbon powder with a thermosetting resin. The printing was carried outby the existing screen printing method.

[0088] The sheet material 704 filled with a conductive paste issandwiched between the release carrier produced by the above-mentionedmethod on which the semiconductor was mounted and another releasecarrier having only wiring pattern in a suitable position. At this time,the sheet was sandwiched between the release carries so that the wiringpattern faced the sheet material. Then, heating and pressing werecarried out by a hot-press at a temperature of 120° C. and a pressure of0.98 MPa for 5 minutes. Since the thermosetting resin in the sheet wassoftened by heating at a temperature, the semiconductor 702 and chipcomponent 703 are buried in the sheet material. Furthermore, the heatingtemperature was raised to 175° C. and this state was held for 60minutes. This heating allowed the epoxy resin in the sheet and the epoxyresin in the conductive resin composition to be cured, so that thesemiconductor and the copper foils are strongly connected to the sheetmaterial mechanically. This heating also allows the conductive paste andthe wiring pattern 701 to be connected to each other electrically(through inner-via connection) and mechanically. Next, the releasecarrier on the surface of the cured product in which the semiconductorwas buried was peeled off. Since the release carrier has a lustroussurface and the wiring layer is formed by electrolytic plating, only thecopper foil that is the release mold carrier can be peeled off. In thisstate, a core layer 706 in which the component was contained was formed.Then, a further wiring layer is formed by using the core layer 706. Inthis method, since a release mold carrier on which the wiring patternwas formed beforehand is used, the cured module becomes a smooth corelayer in which the wiring pattern is buried in the module. Thus, finemultilayer wiring can be formed on the surface of the core layer.Furthermore, since the wiring pattern also is buried, the sheet materialis compressed by a thickness of the wiring pattern on the surface.Therefore, it is possible to obtain an electrical connection of aconductive paste with excellent reliability.

[0089] Next, a multilayer wiring layer is produced by using the corelayer in which a semiconductor and a chip component are contained. Thecore layer is sandwiched between the 100 μm-thick sheet material filledwith the conductive paste that was formed in Example 1 and the releasecarrier 700 having a wiring pattern 701 on a film-shaped component 711as shown in FIG. 7G. Then, heating and pressing are carried out underthe conditions as mentioned above so as to cure the multilayer product,and thereby the wiring pattern 701 on the core layer and release carrierand the film-shaped component 711 are integrated. Furthermore, bypeeling off the release carrier 710 after curing the component built-inmodule of the present invention is obtained. With the use of the releasecarried like this, a wet process such as chemical etching is notnecessary in the production of the substrate, and thus a fine wiringpattern can be obtained simply. Furthermore, there is a specific effectin that in the case of the release carrier using an organic film, sinceit is possible to evaluate the mounting performance before embeddingcomponents, bad components can be repaired on the release carrier.

[0090] In order to evaluate the reliability of the component built-inmodule produced in this example, a hygroscopicity reflow test and athermal shock test (a temperature cycle test) were conducted under thesame conditions as in Example 1. At this time, no cracks were generatedin the semiconductor built-in module in appearance, and abnormality wasnot recognized, even if a supersonic flaw detector was used. These testsconfirmed that the semiconductor and the insulating substrate areadhered to each other strongly. Furthermore, a resistance value of theinner-via connection by the conductive paste, the connection betweencontained components and component performance were hardly changed fromthe initial performance.

EXAMPLE 3

[0091] In Example 3, a higher density module is produced by using a corelayer in which a semiconductor is contained in the sheet material as ina case 2 of Example 1 and a multilayer ceramic substrate.

[0092] A core layer 805 containing a semiconductor 802 produced underthe same conditions as in Example 1 was used (see FIG. 8A). Thethickness of the core layer is 300 μm. Next, the multilayer ceramicsubstrate 809 and the core layer 805 are laminated with an adhesivelayer. Moreover, the ceramic multilayer substrate is produced by using a20 μm-thick green sheet (“MLS-1000” manufactured by Nippon ElectricGlass Co., Ltd.) formed of a low temperature firing material mainlyincluding glass and alumina. Namely, a multilayer ceramic substrate wasformed as follows: a through hole having a 0.2 mm diameter was formed onthe green sheet by a puncher; the through hole was filled with aconductive paste obtained by mixing silver powders having an averageparticle diameter of 2 μm as a main component, an ethyl cellulose resinand a terpineol solvent; and a wiring pattern was formed by printing thesimilar conductive paste. A plurality of the green sheets produced bythe above-mentioned method were laminated at a temperature of 70° C. anda pressure of 4.9 MPa and further fired at a temperature of 900° C. forone hour.

[0093] Next, a through hole is formed on a sheet material produced as inExample 1; furthermore 100 μm-thick sheet materials 810 and 812, whichare filled with a conductive paste, are prepared; the core layer 805 andthe multilayer ceramic substrate 809 are superimposed as shown in FIG.8B; and then heating and pressing are carried out so as to form anintegrated module. At this time, a copper foil 814 may be laminated onthe lowest sheet material so as to form an integrated module, or asshown in FIG. 7A, a wiring pattern may be transferred by a release moldcarrier on which a film-shaped component is formed. Moreover, a solderball is mounted on the wiring pattern of the module produced by theabove-mentioned method so as to make a connection terminal.

[0094] In order to evaluate the reliability of the component built-inmodule produced in this example, a hygroscopicity reflow test and athermal shock test (a temperature cycle test) were conducted under thesame conditions as in Example 1. At this time, no visible cracks weregenerated in the semiconductor built-in module, and abnormality was notrecognized, even if a supersonic flaw detector was used. These testsshow that the semiconductor and the module are adhered to each otherstrongly.

[0095] Furthermore, in order to evaluate the shock resistance of themodule, the drop strength was evaluated by dropping the module from 1.8m high. Specifically, the completed module was mounted onto the glassepoxy substrate by soldering and set into an aluminum container. Whenthe container was dropped onto a concrete surface, the damage of themodule was examined. In the case of the ceramic substrate produced as acomparative example, cracks were generated in about half of the ceramicsubstrates. On the other hand, no cracks were generated in the module ofthe Example 3. Thus, it is thought that the module in which the sheetmaterial was used for adhesion works as a stress buffer layer thatcannot be obtained by only the ceramic substrate, which is said to be aspecific effect of the present invention.

[0096] Furthermore, a resistance value of the inner-via connection bythe conductive paste was hardly changed from the initial performance.

[0097] As mentioned above, according to the component built-in module ofthe present invention, by using a sheet material of a mixture includinga thermosetting resin and high concentrated inorganic filler, it ispossible to bury active components and/or passive components inside thesheet, and the wiring pattern and the multilayer wiring of the electricinsulating layer can be formed simultaneously on at least one surfacethe sheet material. Furthermore, by selecting an inorganic filler, it ispossible to control the thermal conductivity, the coefficient of thermalexpansion, and the dielectric constant. Thus, the coefficient of thermalexpansion in the plane direction can be equalized to that of thesemiconductor, so the substrate is effective to mount directly.Furthermore, by improving the thermal conductivity, it is effective as asubstrate for mounting a semiconductor or the like, requiring the heatradiation. In addition, since it also is possible to lower thedielectric constant, it is effective to form the substrate with low lossas a substrate for high frequency circuit. In addition, by setting themodulus of elasticity and the glass transition temperature of thethermosetting resin at room temperature to fall into a certain range, itis possible to realize a component built-in module having a highreliability with respect to the thermal stress such as a thermal shocktest.

[0098] Furthermore, the method for producing a component built-in moduleof the present invention includes: processing a mixture including aninorganic filler and an uncured state thermosetting resin into a sheetmaterial; preparing a sheet material filled with a conductive resin;superimposing a release carrier onto one surface of which a wiringpattern is formed and active components and/or passive components aremounted onto the above-mentioned sheet material; further superimposingthe release carrier onto a release carrier that was prepared separatelywith the side of the wiring pattern surface of the release carrier facedinward; and burying the components in the sheet material by heating andpressing so as to be cured. Thus, the component built-in module of thepresent invention is obtained. Furthermore, it is possible to form afilm-shaped component that leads out the wiring pattern formed on therelease carrier as an electrode. Thus, it is possible to realize anextremely high-density module containing active components and/orpassive components by a simple method. At the same time, since thewiring pattern can also be buried in the sheet material, a module havinga smooth surface can be realized. Thus, since there is no leveldifference due to the wiring pattern on the surface of the module of thepresent invention, components can be mounted with higher density.

[0099] Furthermore, in the method for producing the multilayerstructured component built-in module of the present invention, since notonly an active component such as a semiconductor etc. and a passivecomponent such as a chip resistor etc. can be contained, but also amultilayer ceramic substrate can be formed in an internal layersimultaneously, it is possible to realize an extremely high-densitymodule. Furthermore, since a plurality of ceramic substrates havingvarious performances can be laminated simultaneously, it is possible torealize an extremely high-performance module.

[0100] As mentioned above, according to the present invention, theactive components or passive components can be contained into a moduleand wiring patterns can be connected by the inner via. Thus, it ispossible to realize an extremely high-density module by a simple method.

[0101] The invention may be embodied in other forms without departingfrom the spirit or essential characteristics thereof. The embodimentsdisclosed in this application are to be considered in all respects asillustrative and not limitative, the scope of the invention is indicatedby the appended claims rather than by the foregoing description, and allchanges which come within the meaning and range of equivalency of theclaims are intended to be embraced therein.

What is claimed is:
 1. A component built-in module comprising: a corelayer formed of an electric insulating material; an electric insulatinglayer formed on at least one surface of the core layer; and a pluralityof wiring patterns formed on at least one surface of the core layer;wherein: the electric insulating material of the core layer is formed ofa mixture comprising at least an inorganic filler and a thermosettingresin; at least one or more of active components and/or passivecomponents are contained in an internal portion of the core layer; thecore layer has a plurality of wiring patterns and a plurality of innervias formed of a conductive resin; and the electric insulating materialformed of the mixture comprising at least an inorganic filler and athermosetting resin of the core layer has a modulus of elasticity atroom temperature in the range from 0.6 GPa to 10 GPa.
 2. A componentbuilt-in module comprising: a core layer formed of an electricinsulating material; an electric insulating layer formed on at least onesurface of the core layer; and a plurality of wiring patterns formed onat least one surface of the core layer; wherein: the electric insulatingmaterial of the core layer is formed of a mixture comprising at least aninorganic filler and a thermosetting resin; at least one or more ofactive components and/or passive components are contained in an internalportion of the core layer; the core layer has a plurality of wiringpatterns and a plurality of inner vias formed of a conductive resin; theelectric insulating material formed of the mixture comprising at leastan inorganic filler and a thermosetting resin of the core layer has amodulus of elasticity at room temperature in the range from 0.6 GPa to10 GPa; and the thermosetting resin comprises a plurality ofthermosetting resins having different glass transition temperatures. 3.A component built-in module comprising: a core layer formed of anelectric insulating material; an electric insulating layer formed on atleast one surface of the core layer; and a plurality of wiring patternsformed on at least one surface of the core layer; wherein: the electricinsulating material of the core layer is formed of a mixture comprisingat least an inorganic filler and a thermosetting resin; at least one ormore of active components and/or passive components are contained in aninternal portion of the core layer; the core layer has a plurality ofwiring patterns and a plurality of inner vias formed of a conductiveresin; the electric insulating material formed of the mixture comprisingat least an inorganic filler and a thermosetting resin of the core layerhas a modulus of elasticity at room temperature in the range from 0.6GPa to 10 GPa; and the thermosetting resin comprises at least athermosetting resin having a glass transition temperature in the rangefrom −20° C. to 60° C. and a thermosetting resin having a glasstransition temperature in the range from 70° C. to 170° C.
 4. Thecomponent built-in module according to any one of claims 1 to 3,comprising a through hole that extends through all of the core layer,the electric insulating layer and the wiring pattern.
 5. The componentbuilt-in module according to any one of claims 1 to 3, comprising a corelayer formed of an electric insulating material; an electric insulatinglayer comprising an electric insulating material formed of a mixtureincluding an inorganic filler and a thermosetting resin, which is formedon at least one surface of the core layer; and a plurality of wiringpatterns formed of a copper foil; wherein the core layer has a pluralityof wiring patterns formed of a copper foil and a plurality of inner viasformed of a conductive resin, and the wiring patterns are connectedelectrically to each other by the inner vias.
 6. The component built-inmodule according to any one of claims 1 to 3, comprising a core layerformed of an electric insulating material; an electric insulating layercomprising an insulating material formed of a thermosetting resin, whichis formed on at least one surface of the core layer; and a plurality ofwiring patterns formed by copper-plating; wherein the core layer has aplurality of wiring patterns formed of a copper foil and a plurality ofinner vias formed of a conductive resin, and the wiring patterns formedby the copper-plating are connected electrically to each other by theinner vias.
 7. The component built-in module according to any one ofclaims 1 to 3, comprising a core layer formed of an electric insulatingmaterial; an electric insulating layer formed of an organic film havingthermosetting resins on both surfaces, which is formed on at least onesurface of the core layer; and a plurality of wiring patterns formed ofa copper foil; wherein the core layer has a plurality of wiring patternsformed of a copper foil and a plurality of inner vias formed of aconductive resin, and the wiring patterns are connected electrically toeach other by the inner vias.
 8. The component built-in module accordingto any one of claims 1 to 3, comprising a core layer formed of anelectric insulating material; and a ceramic substrate having a pluralityof wiring patterns and inner vias adhered onto at least one surface ofthe core layer; wherein the core layer has a plurality of wiringpatterns formed of a copper foil and a plurality of inner vias formed ofa conductive resin.
 9. The component built-in module according to anyone of claims 1 to 3, comprising a core layer formed of an electricinsulating material; and a plurality of ceramic substrates having aplurality of wiring patterns and inner vias adhered onto at least onesurface of the core layer; wherein the core layer has a plurality ofwiring patterns formed of a copper foil and a plurality of inner viasformed of a conductive resin; and the plurality of ceramic substratescomprise dielectric materials having different dielectric constants. 10.The component built-in module according to any one of claims 1 to 3,wherein a film-shaped passive component is disposed between the wiringpatterns formed on at least one surface of the core layer.
 11. Thecomponent built-in module according to claim 10, where the film-shapedpassive component is at least one selected from the group consisting ofa resistor, a capacitor and an inductor formed of a thin film or amixture comprising an inorganic filler and a thermosetting resin. 12.The component built-in module according to claim 10, where thefilm-shaped passive component is a solid electrolytic capacitor formedof at least an oxide layer of aluminum or tantalum and a conductivemacromolecule.
 13. A method for producing a component built-in module,comprising: processing a mixture comprising at least an inorganic fillerand an uncured state thermosetting resin into a sheet; providing thesheet comprising an inorganic filler and an uncured state thermosettingresin with a through hole; filling the through hole with a conductiveresin; mounting an active component and/or passive component on a copperfoil; superimposing the sheet in which the through hole is filled with aconductive resin onto the surface of the copper foil on which thecomponents are mounted; furthermore superimposing a copper foil; buryingthe active and/or passive component in the sheet, followed by heatingand pressing the sheet material, thereby curing the thermosetting resinand the conductive resin in the sheet; then processing the copper foilon the outermost layer into a wiring pattern, thereby forming a corelayer; providing a through hole in a sheet comprising an inorganicfiller and an uncured state thermosetting resin or an organic filmhaving adhesive layers on both surfaces; superimposing a copper foil,and the sheet or the organic film in which the through hole is filledwith a conductive resin onto at least one surface of the core layer,followed by heating and pressing thereof so as to be integrated ontoeach other; and processing the copper foil into a wiring pattern. 14.The method for producing the component built-in module according toclaim 13, wherein a film-shaped component is formed beforehand on thecopper foil that is to be superimposed onto the core layer.
 15. A methodfor producing a component built-in module comprising: processing amixture comprising at least an inorganic filler and an uncured statethermosetting resin into a sheet; providing a through hole in the sheetcomprising an inorganic filler and an uncured state thermosetting resin;filling the through hole with a conductive resin; forming a wiringpattern on one surface of a release carrier; mounting an activecomponent and/or passive component on the wiring pattern of the releasecarrier; superimposing the sheet in which the through hole is filledwith a conductive resin onto the surface of the release carrier having awiring pattern on which the component is mounted; burying andintegrating the active component and/or passive component into thesheet, followed by further heating and pressing thereof, thereby curingthe thermosetting resin and the conductive resin in the sheet material;then peeling off the release carrier on the outermost portion, therebyforming a core layer; providing a through hole in a sheet comprising aninorganic filler and an uncured state thermosetting resin or an organicfilm having adhesive layers on both surfaces; superimposing the releasecarrier having a wiring pattern on one surface, and the sheet or theorganic film in which the through hole is filled with the conductiveresin onto at least one surface of the core layer, followed by heatingand pressing thereof so as to be integrated into each other; and peelingoff the release carrier.
 16. The method for producing the componentbuilt-in module according to claim 15, wherein a film-shaped componentis formed on the wiring pattern formed beforehand on the release carrieron which the wiring pattern is formed to be superimposed onto the corelayer.
 17. The method for producing the component built-in moduleaccording to claim 14 or 16, wherein the film-shaped component is atleast one selected from the group consisting of a resistor, a capacitorand an inductor, which is formed of a thin film or a mixture comprisingan inorganic filler and a thermosetting resin; and the film-shapedcomponent is formed by one method selected from the group consisting ofvapor deposition method, MO-CVD method or a thick film printing method.18. A method for producing a component built-in module comprising:processing a mixture comprising at least an inorganic filler and anuncured state thermosetting resin into a sheet; providing a through holein the sheet comprising an inorganic filler and an uncured statethermosetting resin; filling the through hole with a conductive resin;mounting an active component and/or passive component on a copper foil;superimposing the sheet in which the through hole is filled with aconductive resin onto the surface of the copper foil on which thecomponents are mounted; further superimposing a copper foil; burying theactive and/or passive component in the sheet, followed by heating andpressing the sheet material, thereby curing the thermosetting resin andthe conductive resin in the sheet; then processing the copper foil onthe outermost layer into a wiring pattern, thereby forming a core layer;providing a through hole in a sheet comprising an inorganic filler andan uncured state thermosetting resin or an organic film having adhesivelayers on both surfaces; superimposing the copper foil, and the sheet orthe organic film in which the through hole is filled with a conductiveresin onto at least one surface of the core layer, followed by heatingand pressing thereof so as to be cured; and then forming a through holethat extends through the core layer so as to form a through hole bycopper-plating.
 19. A method for producing a component built-in modulecomprising: processing a mixture comprising at least an inorganic fillerand an uncured state thermosetting resin into a sheet; providing athrough hole in the sheet comprising an inorganic filler and an uncuredstate thermosetting resin; filling the through hole with a conductiveresin; forming a wiring pattern on one surface of a release carrier;mounting an active component and/or passive component on the wiringpattern of the release carrier; superimposing the sheet in which thethrough hole is filled with a conductive resin onto the surface of therelease carrier having a wiring pattern on which the component ismounted; burying and integrating the active component and/or passivecomponent into the sheet, followed by further heating and pressingthereof, thereby curing the thermosetting resin and the conductive resinin the sheet; then peeling off the release carrier on the outermostportion, thereby forming a core layer; providing a through hole in asheet comprising an inorganic filler and an uncured state thermosettingresin or an organic film having adhesive layers on both surfaces;superimposing the release carrier having a wiring pattern on onesurface, and the sheet or the organic film in which the through hole isfilled with a conductive resin onto at least one surface of the corelayer, followed by heating and pressing thereof so as to be cured; andthen forming a hole that extends through the core layer and carrying outcopper-plating thereof to form a through hole.
 20. A method forproducing a component built-in module comprising: processing a mixturecomprising at least an inorganic filler and an uncured statethermosetting resin into a sheet; providing a through hole in the sheetcomprising an inorganic filler and an uncured state thermosetting resin;filling the through hole with a conductive resin; forming a wiringpattern on one surface of the release carrier; mounting an activecomponent and/or passive component on a wiring pattern of the releasecarrier; superimposing the sheet material in which the through hole isfilled with a conductive resin onto the surface of the release carrierhaving a wiring pattern on which the components are mounted; furthersuperimposing a copper foil and heating and pressing in the temperaturerange in which the thermosetting resin is not cured; burying andintegrating the active components and/or passive components into thesheet, thereby forming a core layer; peeling off the release carrierfrom the core layer; and superimposing the ceramic substrate in which atleast two or more of inner vias and wiring patterns are laminated ontoat least one surface of the core layer from which the release carrier ispeeled off, followed by pressing thereof, thereby curing thethermosetting resin in the core layer to be adhered to the ceramicsubstrate.
 21. The method for producing a component built-in moduleaccording to claim 20, wherein a plurality of ceramic substrates havinga plurality of wiring patterns and the inner vias are laminatedsimultaneously via the core layer and the adhesive layer.